FQT1N80 n-channel mosfet ?2007 fairchild semiconductor corporation FQT1N80 rev. a www.fairchildsemi.com 1 qfet ? november 2007 FQT1N80 n-channel mosfet 800v, 0.2a, 20 ? features ?r ds(on) = 15.5 ? (typ.)@ v gs = 10v, i d = 0.1a ? low gate charge ( typ. 5.5nc) ? low c rss ( typ. 2.7pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies and active power factor correction. d g s sot-223 fqt series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FQT1N80 units v dss drain to source voltage 800 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 0.2 a -continuous (t c = 100 o c) 0.12 i dm d r a i n c u r r e n t - p u l s e d (note 1) 0.8 a e as single pulsed avalanche energy (note 2) 90 mj i ar avalanche current (note 1) 0.2 a e ar repetitive avalanche energy (note 1) 0.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25 o c) 2.1 w - derate above 25 o c0.02w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter min. max. units r ja thermal resistance, junction to ambient* - 60 o c/w * when mounted on the minimum pad size recommended (pcb mount)
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FQT1N80 FQT1N80 sot-223 330mm 12mm 4000 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 800 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.8-v/ o c i dss zero gate voltage drain current v ds = 800v, v gs = 0v - - 25 a v ds = 640v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 0.1a - 15.5 20 ? g fs forward transconductance v ds = 40v, i d = 0.1a (note 4) -0.75- s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 150 195 pf c oss output capacitance - 20 30 pf c rss reverse transfer capacitance - 2.7 5.0 pf q g total gate charge at 10v v ds = 640v, i d = 1a v gs = 10v (note 4, 5) -5.57.2nc q gs gate to source gate charge - 1.1 - nc q gd gate to drain ?miller? charge - 3.3 - nc t d(on) turn-on delay time v dd = 400v, i d = 1a r g = 25 ? (note 4, 5) -1030ns t r turn-on rise time - 25 60 ns t d(off) turn-off delay time - 15 40 ns t f turn-off fall time - 25 60 ns i s maximum continuous drain to source diode forward current - - 0.2 a i sm maximum pulsed drain to source diode forward current - - 0.8 a v sd drain to source diode forward voltage v gs = 0v, i sd = 0.2a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 1a di f /dt = 100a/ s (note 4) - 300 - ns q rr reverse recovery charge - 0.6 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 170mh, i as = 1a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 1a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 150 o c 25 o c -55 o c notes : ? 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 20 30 40 50 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0123456 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v note : i ? d = 1.0 a v gs , gate-source voltage [v] q g , total gate charge [nc]
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperatur e figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 0.1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 i d , drain current [a] t c , case temperature [ c] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 100 ms 1 ms 1 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 n otes : ? 1. z jc (t) = 60 /w m ax. ? 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 7 mechanical dimensions 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1 .60 0.20 (0.46) (0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10 +0.10 ?.05 0.06 +0.04 ?.02 sot-223
FQT1N80 n-channel mosfet FQT1N80 rev. a www.fairchildsemi.com 8 trademarks the following are registered and unregistered tr ademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty ther ein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
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